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| November 1997 FDC6322C Dual N & P Channel , Digital FET General Description These dual N & P Channel logic level enhancement mode field effec transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors. Features N-Ch 25 V, 0.22 A, RDS(ON) = 5 @ VGS= 2.7 V. P-Ch 25 V, -0.46 A, RDS(ON) = 1.5 @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace NPN & PNP digital transistors. SOT-23 SuperSOTTM-6 Mark: .322 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 4 3 5 2 6 1 Absolute Maximum Ratings Symbol VDSS, VCC VGSS, VIN ID, IO PD TJ,TSTG ESD Parameter TA = 25oC unless other wise noted N-Channel 25 8 P-Channel -25 -8 -0.46 -1 0.9 0.7 -55 to 150 6 C kV W Units V V A Drain-Source Voltage, Power Supply Voltage Gate-Source Voltage, Drain/Output Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) 0.22 0.5 Operating and Storage Tempature Ranger Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 140 60 C/W C/W (c) 1997 Fairchild Semiconductor Corporation FDC6322C.Rev B1 DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Type N-Ch P-Ch N-Ch P-Ch N-Ch TJ = 55C Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID= 250 A, Referenced to 25 oC ID = -250 A, Referenced to 25 oC IDSS IDSS IGSS Zero Gate Voltage Drain Current VDS= 20 V, VGS= 0 V, VDS =-20 V, VGS = 0 V, TJ = 55C Gate - Body Leakage Current VGS = 8 V, VDS= 0 V VGS = -8 V, VDS= 0 V ON CHARACTERISTICS (Note 2) N-Ch P-Ch 25 -25 25 -22 1 10 P-Ch -1 -10 100 -100 nA nA mV / oC A A mV /oC V BVDSS/TJ Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS(th)/TJ VGS(th) RDS(ON) Gate Threshold Voltage Temp. Coefficient ID = 250 A, Referenced to 25 o C ID= -250 A, Referenced to 25 C o N-Ch P-Ch N-Ch P-Ch N-Ch 0.65 -0.65 -2.1 2.1 0.85 -0.86 3.8 6.3 3.1 1.5 -1.5 5 9 4 1.5 2.4 1.1 Gate Threshold Voltage VDS = VGS, ID= 250 A VDS = VGS, ID= -250 A VGS = 2.7 V, ID = 0.2 A TJ =125C VGS = 4.5 V, ID = 0.4 A VGS = -2.7 V, ID = -0.25 A TJ =125C VGS = -4.5 V, ID = -0.5 A V Static Drain-Source On-Resistance P-Ch 1.22 1.65 0.87 ID(ON) gFS On-State Drain Current VGS = 2.7 V, VDS = 5 V VGS = -2.7 V, VDS = -5 V VDS = 5 V, ID= 0.4 A VDS = -5 V, ID= -0.5 A N-Ch P-Ch N-Ch P-Ch 0.2 -0.5 0.2 0.8 A Forward Transconductance S DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance N-Channel VDS= 10 V, VGS= 0 V, Output Capacitance Reverse Transfer Capacitance f = 1.0 MHz P-Channel VDS= -10 V, VGS = 0V, f = 1.0 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 9.5 62 6 35 1.3 9.5 pF FDC6322C.Rev B1 SWITCHING CHARACTERISTICS (Note 2) Symbol tD(on) tr Parameter Turn - On Delay Time Conditions N-Channel VDD = 6 V, ID = 0.5 A, Turn - On Rise Time VGs = 4.5 V, RGEN = 50 P-Channel VDD = -6 V, ID = -0.5 A, tf Turn - Off Fall Time VGen = -4.5 V, RGEN = 50 N-Channel VDS= 5 V, ID = 0.2 A, Qgs Qgd Gate-Source Charge VGS = 4.5 V P- Channel Gate-Drain Charge VDS = -5 V, ID = -0.25 A, VGS = -4.5 V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Maximum Continuous Drain-Source Diode Forward Current N-Ch P-Ch Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A VGS = 0 V, IS = -0.5 A (Note 2) (Note 2) Type N-Ch P-Ch N-Ch P-Ch Min Typ 5 7 4.5 8 4 55 3.2 35 0.49 1 0.22 0.32 0.07 0.25 Max 10 14 10 16 8 90 7 55 0.7 1.5 Units nS nS tD(off) Turn - Off Delay Time N-Ch P-Ch N-Ch P-Ch nS nS Qg Total Gate Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch nC nC nC 0.5 -0.5 0.97 -0.88 1.3 -1.2 A N-Ch P-Ch V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. RJA shown below for single device operation on FR-4 in still air. a. 140OC/W on a 0.125 in2 pad of 2oz copper. b. 180OC/W on a 0.005 in2 of pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDC6322C.Rev B1 Typical Electrical Characteristics: N-Channel 0.5 4.0 3.5 3.0 2.7 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 4.5V 1.4 I D , DRAIN-SOURCE CURRENT (A) 0.4 VGS = 2.0V 1.2 0.3 2.5 2.5 1 2.7 3.0 3.5 0.2 2.0 0.1 0.8 4.0 4.5 1.5 0 0 0.5 V DS 1 1.5 2 , DRAIN-SOURCE VOLTAGE (V) 2.5 3 0.6 0 0.1 0.2 0.3 I D , DRAIN CURRENT (A) 0.4 0.5 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 DRAIN-SOURCE ON-RESISTANCE R DS(ON), NORMALIZED 15 1.6 1.4 1.2 1 0.8 0.6 -50 I D = 0.2A VGS = 2.7 V R DS(on) , ON-RESISTANCE (OHM) I D = 0.2A 12 25C 9 125C 6 3 0 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (C) J 125 150 2 2.5 3 3.5 V GS , GATE TO SOURCE VOLTAGE (V) 4 Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. 0.2 V DS = 5.0V I S, REVERSE DRAIN CURRENT (A) T = -55C J 25C 125C 0.5 V GS = 0V 0.2 0.1 TJ = 125C 25C I D , DRAIN CURRENT (A) 0.15 0.1 0.01 -55C 0.05 0.001 0 0.5 1 1.5 2 V GS , GATE TO SOURCE VOLTAGE (V) 2.5 0.0001 0.2 0.4 0.6 0.8 1 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6322C.Rev B1 Typical Electrical Characteristics: N-Channel (continued) 30 20 5 V GS , GATE-SOURCE VOLTAGE (V) ID = 0.2A 4 VDS = 5V 10V 15V CAPACITANCE (pF) 10 C iss C oss 3 5 2 3 2 f = 1 MHz V GS = 0V C rss 0.5 1 2 5 10 25 1 1 0.1 0 V , DRAIN TO SOURCE VOLTAGE (V) DS 0 0.1 0.2 0.3 0.4 0.5 0.6 Q g , GATE CHARGE (nC) Figure 7. Capacitance Characteristics. Figure 8. Gate Charge Characteristics. 1 0.5 ID , DRAIN CURRENT (A) IT IM )L ON S( RD 5 1m 10 s ms 4 POWER (W) 0.2 0.1 0.05 10 1s DC 0m SINGLE PULSE RJA =See note 1b TA = 25C s 3 2 0.02 0.01 0.5 V GS = 2.7V SINGLE PULSE RJA =See note 1b TA = 25C 1 V DS 1 2 5 10 15 25 35 0 0.01 0.1 1 10 100 300 , DRAI N-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDC6322C.Rev B1 Typical Electrical Characteristics: P-Channel -1.5 , DRAIN-SOURCE CURRENT (A) -1.6 VGS = -4.5V -3.5 -3.0 -2.7 -2.5 R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -1.4 -1.25 -1 -0.75 V GS = -2.0 V -1.2 -2.5 -2.7 -1 -2.0 -3.0 -3.5 -4.0 -4.5 -0.5 -0.25 0 -1.5 -0.8 I D -0.6 0 -1 -2 -3 -4 -5 0 -0.2 V DS , DRAIN-SOURCE VOLTAGE (V) -0.4 -0.6 I D , DRAIN CURRENT (A) -0.8 -1 Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 DRAIN-SOURCE ON-RESISTANCE R DS(on) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED 5 I D = -0.25A 1.4 25C 4 I D = -0.5A 125C V GS = -2.7V 1.2 3 1 2 0.8 1 0.6 -50 0 -25 0 25 50 75 100 T J, JUNCTION TEMPERATURE (C) 125 150 -1 -1.5 -2 -2.5 -3 -3.5 -4 -4.5 -5 V GS , GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. Figure 14. On Resistance Variation with -1 0.5 25C I D , DRAIN CURRENT (A) -0.75 -I , REVERSE DRAIN CURRENT (A) V DS = -5V T J = -55C 0.1 VGS = 0V TJ = 125C 25C 125C 0.01 -0.5 -55C -0.25 0 -0.5 -1 -1.5 -2 -2.5 V GS , GATE TO SOURCE VOLTAGE (V) -3 S 0.0001 0 0.2 0.4 0.6 0.8 1 -V SD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6322C.Rev B1 Typical Electrical Characteristics: P-Channel (continued) 5 -V GS , GATE-SOURCE VOLTAGE (V) 2 I D = -0.25A 4 VDS = 5V -I D , DRAIN CURRENT (A) 10V 15V 1 N) LI M IT 1m 10 s m s 1s DC 10 0m s 3 0.3 R ( DS O 2 0.1 1 0.03 VGS = -2.7V SINGLE PULSE RJA = See Note 1b A T A = 25C 0.2 0.5 1 2 5 10 15 25 35 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Q g , GATE CHARGE (nC) 0.01 0.1 - VDS , DRAIN-SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. Figure 18. Maximum Safe Operating Area. 150 100 CAPACITANCE (pF) 60 40 5 C iss POWER (W) 4 Coss 20 3 SINGLE PULSE RJA =See note 1b TA = 25C 2 f = 1 MHz 10 V GS = 0 V C rss 1 5 0.1 0.2 0.5 1 2 5 10 25 0 0.01 0.1 1 10 100 300 -V DS , DRAIN TO SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 19. Capacitance Characteristics. Figure 20. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 D = 0.5 0.2 0.1 0.05 0.2 0.1 P(pk) 0.05 0.02 0.01 Single Pulse RJA (t) = r(t) * R JA R JA = See Note 1b t1 TJ - T A t2 0.02 0.01 0.0001 = P * R JA(t) Duty Cycle, D = t 1/ t 2 0.01 0.1 t 1, TIME (sec) 1 10 100 300 0.001 Figure 21. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal response will change depending on the circuit board design. FDC6322C.Rev B1 |
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